IXFB90N85X Series

DiscMSFT NCh UltrJnctn XClass TO-264(3)

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NCh UltrJnctn XClass TO-264(3)

Part	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Littelfuse/Commercial Vehicle Products IXFB90N85X	Through Hole	PLUS264™	41 mOhm	5.5 V	-55 °C	150 °C	30 V	850 V	N-Channel	TO-264-3 TO-264AA	13300 pF	1785 W	340 nC	MOSFET (Metal Oxide)	10 V	90 A

Catalog

DiscMSFT NCh UltrJnctn XClass TO-264(3)

Key Features

• Ultra low on-resistance RDS(ON)and gate charge Qg

• Fast body diode

• dv/dt ruggedness

• Avalanche rated

• Low package inductance

• International standard packages

Description

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings