NSS20300MR6 Series

Bipolar Transistor, Low VCE(sat), PNP, 3.0 A, 20 V

Catalog

Bipolar Transistor, Low VCE(sat), PNP, 3.0 A, 20 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
ON Semiconductor NSS20300MR6T1G	100	100 nA	6-TSOP	Surface Mount	SOT-23-6 Thin TSOT-23-6	20 V	3 A	320 mV	PNP	100 MHz	-55 °C	150 °C	545 mW

Catalog

Bipolar Transistor, Low VCE(sat), PNP, 3.0 A, 20 V

Key Features

• High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Description

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.