IRF2807 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 75V 75A D2PAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3270 pF | 75 V | 9.4 mOhm | Surface Mount | 20 V | -55 °C | 175 ░C | 10 V | 75 A | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 170 W | 4 V | 110 nC | MOSFET (Metal Oxide) | TO-263 (D2PAK) |
Vishay General Semiconductor - Diodes Division | 3270 pF | 75 V | 9.4 mOhm | Surface Mount | 20 V | -55 °C | 175 ░C | 10 V | 75 A | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 170 W | 4 V | 110 nC | MOSFET (Metal Oxide) | TO-263 (D2PAK) |