H11G Series
Manufacturer: ON Semiconductor
OPTOISO 5.3KV DARL W/BASE 6SMD
| Part | Turn On / Turn Off Time (Typ) | Output Type | Current Transfer Ratio (Min) [Min] | Voltage - Forward (Vf) (Typ) | Mounting Type | Package / Case | Voltage - Isolation | Vce Saturation (Max) [Max] | Number of Channels | Supplier Device Package | Current - DC Forward (If) (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Input Type | Package / Case | Package / Case | Package / Case | Voltage - Output (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Surface Mount | 6-SMD Gull Wing | 5300 Vrms | 1 V | 1 | 6-SMD | 60 mA | 100 °C | -55 °C | DC | ||||
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 0.3 in | 7.62 mm | ||
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 10.16 mm | 10.16 mm | 100 V | |
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 200 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1.2 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 0.3 in | 7.62 mm | 55 V | |
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Surface Mount | 6-SMD Gull Wing | 5300 Vrms | 1 V | 1 | 6-SMD | 60 mA | 100 °C | -55 °C | DC | 100 V | |||
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 200 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1.2 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 0.3 in | 7.62 mm | 55 V | |
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 200 % | 1.3 V | Through Hole | 6-DIP | 7500 Vpk | 1.2 V | 1 | 6-DIP | 60 mA | 100 °C | -40 °C | DC | 0.3 in | 7.62 mm | 55 V | |
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 10.16 mm | 10.16 mm | ||
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 1000 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 10.16 mm | 10.16 mm | 100 V | |
ON Semiconductor | 5 µs 100 µs | Darlington with Base | 200 % | 1.3 V | Through Hole | 6-DIP | 5300 Vrms | 1.2 V | 1 | 6-DIP | 60 mA | 100 °C | -55 °C | DC | 10.16 mm | 10.16 mm | 55 V |