TSM2307 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET, P-CH, -30V, -3A, SOT-23
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 3 A | 20 V | 1.25 W | 30 V | MOSFET (Metal Oxide) | 10 nC | 565 pF | P-Channel | 3 V | SC-59 SOT-23-3 TO-236-3 | 150 °C | 95 mOhm | Surface Mount | SOT-23 | 4.5 V 10 V |