MUR2X030 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 1000V 30A SOT227
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Current - Reverse Leakage @ Vr | Mounting Type | Package / Case | Supplier Device Package | Speed | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Speed [Min] | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -55 °C | Standard | 25 µA | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | 200 mA 500 ns | 85 ns | 1000 V | 30 A | 2 Independent | |||
GeneSiC Semiconductor | 175 ░C | -65 C | Standard | 25 µA | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | 200 mA 500 ns | 85 ns | 1.2 kV | 30 A | 2 Independent | |||
GeneSiC Semiconductor | 175 ░C | -55 °C | Standard | 25 µA | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | 400 V | 30 A | 2 Independent | 1.3 V | 200 mA 500 ns | |||
GeneSiC Semiconductor | 175 ░C | -55 °C | Standard | 25 µA | Chassis Mount | SOT-227-4 miniBLOC | SOT-227 | 200 mA 500 ns | 60 ns | 200 V | 30 A | 2 Independent | 1 V |