SIE818 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 75V 60A 10POLARPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 5.2 W 125 W | 9.5 mOhm | 60 A | 10-PolarPAK® (L) | N-Channel | 75 V | 20 V | 3200 pF | 10-PolarPAK® (L) | 95 nC | 3 V | MOSFET (Metal Oxide) | 4.5 V 10 V | Surface Mount |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 5.2 W 125 W | 9.5 mOhm | 60 A | 10-PolarPAK® (L) | N-Channel | 75 V | 20 V | 3200 pF | 10-PolarPAK® (L) | 95 nC | 3 V | MOSFET (Metal Oxide) | 4.5 V 10 V | Surface Mount |