FGA40N65SMD Series

IGBT, 650V, 40A, Field Stop

Catalog

IGBT, 650V, 40A, Field Stop

Part	Mounting Type	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	IGBT Type	Td (on/off) @ 25°C	Power - Max [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FGA40N65SMD	Through Hole	120 A	80 A	Field Stop	12 ns 92 ns	349 W	6 Ohm 15 V 40 A 400 V	2.5 V	TO-3PN	42 ns	650 V	260 µJ 820 µJ	SC-65-3 TO-3P-3	-55 °C	175 ░C

Catalog

IGBT, 650V, 40A, Field Stop

Key Features

• Maximum junction temperature : TJ=175 °C

• Positive temperature co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: VCE(sat)=1.9V(Typ.) @ IC= 40A

• Fast switching: EOFF=6.5uJ/A

• Tightened parameter distribution

• RoHS compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.