FCU360N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, IPAK

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor FCU360N65S3R0	Through Hole	TO-251-3 Stub Leads IPAK	10 A	IPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, IPAK

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 18 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)

• Optimized Capacitance

• Internal Gate Resistance: 1 Ω

• Typ. RDS(on)= 310 mΩ

• RoHS Compliant

• 100% Avalanche Tested

Description

SuperFET®III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.