CSD13380F3 Series

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Part	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs
Texas Instruments CSD13380F3T	8 V	1.3 V	500 mW	12 V	N-Channel	Surface Mount	3-PICOSTAR	156 pF	1.8 V 4.5 V	3.6 A	MOSFET (Metal Oxide)	-55 °C	150 °C	1.2 nC	3-XFDFN	76 mOhm
Texas Instruments CSD13380F3	8 V	1.3 V	500 mW	12 V	N-Channel	Surface Mount	3-PICOSTAR	156 pF	1.8 V 4.5 V	3.6 A	MOSFET (Metal Oxide)	-55 °C	150 °C	1.2 nC	3-XFDFN	76 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Key Features

• Low on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on resistanceUltra-low Qgand QgdHigh operating drain currentUltra-small footprint0.73 mm × 0.64 mmLow profile0.36-mm max heightIntegrated ESD protection diodeRated > 3-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . . This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . .