IRFL110 Series

Catalog

MOSFET N-CH 100V 1.5A SOT223

Part	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFL110PBF	TO-261-4 TO-261AA	4 V	8.3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	180 pF	10 V	N-Channel	540 mOhm	SOT-223	100 V	Surface Mount	20 V	1.5 A	2 W 3.1 W
Vishay General Semiconductor - Diodes Division IRFL110TRPBF	TO-261-4 TO-261AA	4 V	8.3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	180 pF	10 V	N-Channel	540 mOhm	SOT-223	100 V	Surface Mount	20 V	1.5 A	2 W 3.1 W
Vishay General Semiconductor - Diodes Division IRFL110TR	TO-261-4 TO-261AA	4 V	8.3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	180 pF	10 V	N-Channel	540 mOhm	SOT-223	100 V	Surface Mount	20 V	1.5 A	2 W 3.1 W
Vishay General Semiconductor - Diodes Division IRFL110TRPBF-BE3	TO-261-4 TO-261AA	4 V	8.3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	180 pF	10 V	N-Channel	540 mOhm	SOT-223	100 V	Surface Mount	20 V	1.5 A	2 W 3.1 W