FQA4 Series

Catalog

MOSFET N-CH 100V 48A TO3P

Part	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQA44N10	MOSFET (Metal Oxide)	39 mOhm	10 V	TO-3P	SC-65-3 TO-3P-3	1800 pF	25 V	Through Hole	180 W	N-Channel	62 nC	4 V	-55 °C	175 ░C	48 A	100 V
ON Semiconductor FQA46N15_F109	MOSFET (Metal Oxide)	42 mOhm	10 V	TO-3P	SC-65-3 TO-3P-3	3250 pF	25 V	Through Hole		N-Channel		4 V	-55 °C	175 ░C	50 A	150 V	250 W	110 nC
ON Semiconductor FQA47P06	MOSFET (Metal Oxide)		10 V	TO-3P	SC-65-3 TO-3P-3		25 V	Through Hole	214 W	P-Channel		4 V	-55 °C	175 ░C	55 A	60 V		110 nC	3600 pF	26 mOhm
ON Semiconductor FQA44N08	MOSFET (Metal Oxide)	34 mOhm	10 V	TO-3P	SC-65-3 TO-3P-3	1430 pF	25 V	Through Hole	163 W	N-Channel		4 V	-55 °C	175 ░C	49.8 A	80 V		50 nC