MC14012B Series

Dual 4-Input NAND Gates

Catalog

Dual 4-Input NAND Gates

Part	Number of Inputs	Package / Case [x]	Package / Case [y]	Package / Case	Current - Quiescent (Max) [Max]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Mounting Type	Logic Type	Input Logic Level - Low [Min]	Input Logic Level - Low [Max]	Number of Circuits	Max Propagation Delay @ V, Max CL	Input Logic Level - High [Max]	Input Logic Level - High [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package
ON Semiconductor MC14012BDR2G	4	0.154 in	3.9 mm	14-SOIC	1 çA	8.8 mA	8.8 mA	Surface Mount	NAND Gate	1.5 V	4 V	2	100 ns	11 V	3.5 V	-55 °C	125 °C	18 V	3 V
ON Semiconductor MC14012BCP	4	0.3 "	7.62 mm	14-DIP	1 çA	8.8 mA	8.8 mA	Through Hole	NAND Gate	1.5 V	4 V	2	100 ns	11 V	3.5 V	-55 °C	125 °C	18 V	3 V
ON Semiconductor MC14012BDG	4	0.154 in	3.9 mm	14-SOIC	1 çA	8.8 mA	8.8 mA	Surface Mount	NAND Gate	1.5 V	4 V	2	100 ns	11 V	3.5 V	-55 °C	125 °C	18 V	3 V
ON Semiconductor NLV14012BDG	4	0.154 in	3.9 mm	14-SOIC	1 çA	8.8 mA	8.8 mA	Surface Mount	NAND Gate	1.5 V	4 V	2	100 ns	11 V	3.5 V	-55 °C	125 °C	18 V	3 V
ON Semiconductor MC14012BFEL	4	0.209 "	5.3 mm	14-SOIC	1 çA	8.8 mA	8.8 mA	Surface Mount	NAND Gate	1.5 V	4 V	2	100 ns	11 V	3.5 V	-55 °C	125 °C	18 V	3 V	SOEIAJ-14

Catalog

Dual 4-Input NAND Gates

Key Features

• Supply Voltage Range = 3.0 Vdc to 18 Vdc

• All Outputs Buffered

• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.

• Double Diode Protection on All Inputs

• Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices

• Pb-Free Packages are Available*

Description

These Dual 4 Input NAND Gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.