QS8J4 Series

-30V Pch+Pch Small Signal MOSFET

Catalog

-30V Pch+Pch Small Signal MOSFET

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Feature	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id
Rohm Semiconductor QS8J4TR	550 mW	56 mOhm	30 V	4 A	Logic Level Gate	150 °C	13 nC	2 P-Channel (Dual)	MOSFET (Metal Oxide)	800 pF	TSMT8	Surface Mount	2.5 V

Catalog

-30V Pch+Pch Small Signal MOSFET

Description

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.