MBR12035 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MOD SCHOTT 35V 120A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) (per Diode) | Package / Case | Diode Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 200 mA 500 ns | -55 °C | 150 °C | Twin Tower | 3 mA | 120 A (DC) | Twin Tower | 1 Pair Common Cathode | Schottky |
 GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 200 mA 500 ns | Twin Tower | 3 mA | 120 A (DC) | Twin Tower | 1 Pair Common Anode | Schottky | ||
 GeneSiC Semiconductor | 650 mV | Chassis Mount | 35 V | 200 mA 500 ns | -55 °C | 150 °C | Twin Tower | 3 mA | 120 A (DC) | Twin Tower | 1 Pair Common Anode | Schottky |