TJ30S06 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 60V 30A DPAK
| Part | Technology | Mounting Type | Grade | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Vgs (Max) [Min] | Qualification | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Surface Mount | Automotive | 3950 pF | 10 V | -20 V | AEC-Q101 | 6 V 10 V | P-Channel | 60 V | DPAK+ | 175 °C | 3 V | 68 W | 30 A | 80 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 21.8 mOhm |
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Surface Mount | 3950 pF | 10 V | -20 V | 6 V 10 V | P-Channel | 60 V | DPAK+ | 175 °C | 3 V | 68 W | 30 A | 80 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 21.8 mOhm |