SI4214 Series

Catalog

MOSFET 2N-CH 30V 8.5A 8SOIC

Part	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Configuration	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SI4214DY-T1-GE3	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	23.5 mOhm	2.5 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	3.1 W	785 pF	8.5 A	23 nC	8-SOIC	Surface Mount
Vishay General Semiconductor - Diodes Division SI4214DDY-T1-GE3	8-SOIC	3.9 mm	0.154 in	30 V	-55 °C	150 °C	19.5 mOhm	2.5 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	3.1 W		8.5 A	22 nC	8-SOIC	Surface Mount	Logic Level Gate	660 pF