TLP628 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TR COUPLER; DIP4 WIDE CREEPAGE;

Part	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Min) [Min]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Vce Saturation (Max) [Max]	Voltage - Output (Max) [Max]	Current Transfer Ratio (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Current - Output / Channel [custom]	Input Type	Package / Case	Output Type	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ)	Number of Channels [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Current Transfer Ratio (Min)	Package / Case
Toshiba Semiconductor and Storage TLP628MF(GB,E	1.25 V	100 %	Through Hole	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-DIP	50 mA	DC	4-DIP (0.400" 10.16mm)	Transistor	10 µs	10 µs	1	-55 C	125 °C
Toshiba Semiconductor and Storage TLP628M(GB-TP5,E	1.25 V	100 %	Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD Gull Wing	Transistor	10 µs	10 µs	1	-55 C	125 °C
Toshiba Semiconductor and Storage TLP628M(LF1,E	1.25 V		Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD	Transistor	10 µs	10 µs	1	-55 C	125 °C	0.3 in	7.62 mm	50 %
Toshiba Semiconductor and Storage TLP628M(TP5,E	1.25 V		Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD Gull Wing	Transistor	10 µs	10 µs	1	-55 C	125 °C			50 %
Toshiba Semiconductor and Storage TLP628M(GB-LF5,E	1.25 V	100 %	Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD Gull Wing	Transistor	10 µs	10 µs	1	-55 C	125 °C
Toshiba Semiconductor and Storage TLP628M(GB,E	1.25 V	100 %	Through Hole	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-DIP	50 mA	DC	4-DIP	Transistor	10 µs	10 µs	1	-55 C	125 °C	7.62 mm			0.3 in
Toshiba Semiconductor and Storage TLP628M(E	1.25 V		Through Hole	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-DIP	50 mA	DC	4-DIP	Transistor	10 µs	10 µs	1	-55 C	125 °C	7.62 mm		50 %	0.3 in
Toshiba Semiconductor and Storage TLP628M(GB-TP1,E	1.25 V	100 %	Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD	Transistor	10 µs	10 µs	1	-55 C	125 °C	0.3 in	7.62 mm
Toshiba Semiconductor and Storage TLP628M(LF5,E	1.25 V		Surface Mount	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-SMD	50 mA	DC	4-SMD Gull Wing	Transistor	10 µs	10 µs	1	-55 C	125 °C			50 %
Toshiba Semiconductor and Storage TLP628MF(E	1.25 V		Through Hole	10 µs	5.5 µs	400 mV	350 V	600 %	50 mA	4-DIP	50 mA	DC	4-DIP (0.400" 10.16mm)	Transistor	10 µs	10 µs	1	-55 C	125 °C			50 %