IRFU9 Series

Catalog

MOSFET P-CH 50V 9.9A TO251AA

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division IRFU9020	280 mOhm	20 V	50 V	9.9 A	4 V	10 V	TO-251AA	-55 °C	150 °C	Through Hole	14 nC	42 W	IPAK TO-251-3 Short Leads TO-251AA	P-Channel	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFU9220	1.5 Ohm	20 V	200 V	3.6 A	4 V	10 V	TO-251AA	-55 °C	150 °C	Through Hole		2.5 W 42 W	IPAK TO-251-3 Short Leads TO-251AA	P-Channel	MOSFET (Metal Oxide)	20 nC	340 pF
Vishay General Semiconductor - Diodes Division IRFU9024	280 mOhm	20 V	60 V	8.8 A	4 V	10 V	TO-251AA	-55 °C	150 °C	Through Hole	19 nC	2.5 W 42 W	IPAK TO-251-3 Short Leads TO-251AA	P-Channel	MOSFET (Metal Oxide)		570 pF
Vishay General Semiconductor - Diodes Division IRFU9210	3 Ohm	20 V	200 V	1.9 A	4 V	10 V	TO-251AA	-55 °C	150 °C	Through Hole	8.9 nC	2.5 W 25 W	IPAK TO-251-3 Short Leads TO-251AA	P-Channel	MOSFET (Metal Oxide)		170 pF