SQ4920 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Power - Max [Max] | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.4 W | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 14.5 mOhm | 2.5 V | 30 V | 30 nC | -55 °C | 175 ░C | 2 N-Channel (Dual) | Surface Mount | 8-SOIC | 8 A | ||
Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 14.5 mOhm | 2.5 V | 30 V | 30 nC | -55 °C | 175 ░C | 2 N-Channel (Dual) | Surface Mount | 8-SOIC | 8 A | Automotive | AEC-Q101 |