SIS406 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 9A PPAK1212-8
| Part | Rds On (Max) @ Id, Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 11 mOhm | 25 V | 9 A | PowerPAK® 1212-8 | N-Channel | 28 nC | 1100 pF | -55 °C | 150 °C | 30 V | 1.5 W | PowerPAK® 1212-8 | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | 3 V |