MBR40030 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 30V 200A 2TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Diode Configuration | Speed | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 30 V | Schottky | 1 Pair Common Anode | 200 mA 500 ns | 200 A | 580 mV | Twin Tower | Chassis Mount | Twin Tower | 3 mA | -55 °C | 150 °C |
GeneSiC Semiconductor | 30 V | Schottky | 1 Pair Common Cathode | 200 mA 500 ns | 200 A | 580 mV | Twin Tower | Chassis Mount | Twin Tower | 3 mA | -55 °C | 150 °C |
GeneSiC Semiconductor | 30 V | Schottky | 1 Pair Common Anode | 200 mA 500 ns | 200 A | 650 mV | Twin Tower | Chassis Mount | Twin Tower | 5 mA | -55 °C | 150 °C |
GeneSiC Semiconductor | 30 V | Schottky | 1 Pair Common Cathode | 200 mA 500 ns | 200 A | 650 mV | Twin Tower | Chassis Mount | Twin Tower | 5 mA | -55 °C | 150 °C |