BSM250D17P2E004 Series

1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module

Catalog

1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module

Part	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type
Rohm Semiconductor BSM250D17P2E004	Module	2 N-Channel (Half Bridge)	1.7 kV	1700 V	30000 pF	150 °C	-40 °C	1800 W	Silicon Carbide (SiC)	250 A	4 V	Module	Chassis Mount

Catalog

1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module

Key Features

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

Description

BSM250D17P2E004 is a half bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.