GB50MPS17 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.7KV 216A TO247
| Part | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) | Technology | Reverse Recovery Time (trr) | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-247-2 | 1700 V | 3193 pF | TO-247-2 | 1.8 V | 216 A | SiC (Silicon Carbide) Schottky | 0 ns | 500 mA | Through Hole | 60 µA | 175 ░C | -55 °C |