TPW1R104 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 40V 120A 8DSOP
| Part | Mounting Type | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Operating Temperature | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Qualification | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 8-PowerVDFN | 20 V | 6 V 10 V | Automotive | 1.14 mOhm | 40 V | 175 °C | N-Channel | 4560 pF | 120 A | AEC-Q101 | 3 V | 960 mW | 132 W | 8-DSOP Advance | 55 nC | MOSFET (Metal Oxide) |