SI4288 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 40V 9.2A 8SOIC
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Feature | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 15 nC | 2.5 V | Logic Level Gate | 40 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 3.1 W | 2 N-Channel (Dual) | 20 mOhm | 8-SOIC | 9.2 A | MOSFET (Metal Oxide) |