SI3900 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET 2N-CH 20V 2A 6TSOP
| Part | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | FET Feature | Supplier Device Package | Configuration | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4 nC | 125 mOhm | Surface Mount | Logic Level Gate | 6-TSOP | 2 N-Channel (Dual) | 20 V | MOSFET (Metal Oxide) | 1.5 V | SOT-23-6 Thin TSOT-23-6 | -55 °C | 150 °C | 2 A | 830 mW |