FQB8N90CTM Series

Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQB8N90CTM	30 V	45 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	171 W	1.9 Ohm	900 V	TO-263 (D2PAK)	2080 pF	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6.3 A	5 V	10 V

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK

Key Features

• 6.3 A, 900 V, RDS(on)= 1.9 Ω (Max.) @ VGS= 10 V

• Low Gate Charge (Typ. 35 nC)

• Low Crss(Typ. 12 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.