SIR606 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 10.9A PPAK
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 100 V | 20 V | PowerPAK® SO-8 | Surface Mount | N-Channel | 10.9 A 38.7 A | 5 W 62.5 W | MOSFET (Metal Oxide) | PowerPAK® SO-8 | -55 °C | 150 °C | 1470 pF | 4 V | 30 nC | 10 V | 7.5 V | 17.4 mOhm |