FQU10N20C Series

Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK

Part	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor FQU10N20CTU	4 V	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C	7.8 A	N-Channel	200 V	510 pF	50 W	360 mOhm	IPAK	26 nC	30 V	MOSFET (Metal Oxide)	10 V	Through Hole

Catalog

Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK

Key Features

• 7.8A, 200V, RDS(on)= 360mΩ(Max.) @VGS= 10 V, ID= 3.9A

• Low gate charge ( Typ. 20nC)

• Low Crss( Typ. 40.5pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.