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Dual N-Channel Enhancement Mode MOSFET
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Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Power - Max [Max] | Configuration | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 2 W | 2 N-Channel (Dual) | Logic Level Gate | 725 pF | MOSFET (Metal Oxide) | Surface Mount | 6.9 A | 2.1 V | 8-SO | 20 mOhm | 13 nC | 30 V | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C |