MUR10060 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 50A 2TOWER
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Current - Average Rectified (Io) (per Diode) | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Package / Case | Reverse Recovery Time (trr) | Diode Configuration | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 50 A | Chassis Mount | 600 V | 1.7 V | Twin Tower | Twin Tower | 110 ns | 1 Pair Common Cathode | Standard |
GeneSiC Semiconductor | -55 °C | 150 °C | 200 mA 500 ns | 50 A | Chassis Mount | 600 V | 1.7 V | Twin Tower | Twin Tower | 110 ns | 1 Pair Common Anode | Standard |