SFH615 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
OPTOISOLATOR 5.3KV TRANS 4SMD
| Part | Mounting Type | Current - DC Forward (If) (Max) [Max] | Turn On / Turn Off Time (Typ) | Vce Saturation (Max) [Max] | Current Transfer Ratio (Max) | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Forward (Vf) (Typ) | Current Transfer Ratio (Min) [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Current - Output / Channel | Number of Channels | Voltage - Output (Max) [Max] | Output Type | Voltage - Isolation | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2.3 µs 3 µs | 400 mV | 320 % | DC | 2 µs | 2 µs | 1.35 V | 160 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD |
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2.3 µs 3 µs | 400 mV | 125 % | DC | 2 µs | 2 µs | 1.35 V | 63 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD |
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2.3 µs 3 µs | 400 mV | 125 % | DC | 2 µs | 2 µs | 1.35 V | 63 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD |
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2 µs 25 µs | 400 mV | 300 % | DC | 1.25 V | 100 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2 µs 25 µs | 400 mV | 150 % | DC | 1.25 V | 50 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2 µs 25 µs | 400 mV | 150 % | DC | 1.25 V | 50 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD | ||
Vishay General Semiconductor - Diodes Division | Through Hole | 60 mA | 2.3 µs 3 µs | 400 mV | 80 % | DC | 2 µs | 2 µs | 1.35 V | 40 % | 100 °C | -55 °C | 4-DIP | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-DIP |
Vishay General Semiconductor - Diodes Division | Through Hole | 60 mA | 2.3 µs 3 µs | 400 mV | 125 % | DC | 2 µs | 2 µs | 1.35 V | 63 % | 100 °C | -55 °C | 4-DIP | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-DIP |
Vishay General Semiconductor - Diodes Division | Through Hole | 60 mA | 2 µs 25 µs | 400 mV | 150 % | DC | 1.25 V | 50 % | 100 °C | -55 °C | 4-DIP (0.300" 7.62mm) | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-DIP | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 60 mA | 2 µs 25 µs | 400 mV | 300 % | DC | 1.25 V | 100 % | 100 °C | -55 °C | 4-SMD Gull Wing | 50 mA | 1 | 70 V | 1.81 mOhm | 5300 Vrms | 4-SMD |