BUB323Z Series

NPN Darlington Bipolar Power Transistor

Catalog

NPN Darlington Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
ON Semiconductor BUB323ZT4G	350 V	Surface Mount	2 MHz	100 µA	1.7 V	175 ░C	-65 °C	D2PAK	150 W	500 hFE	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
ON Semiconductor BUB323Z	350 V	Surface Mount	2 MHz	100 µA	1.7 V	175 ░C	-65 °C	D2PAK	150 W	500 hFE	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

NPN Darlington Bipolar Power Transistor

Key Features

• Integrated High–Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V)Guaranteed Over the –40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live Ignition Circuit

• High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Pb-Free Packages are Available

Description

The BUB323Z is a planar, monolithic, high voltage bipolar power Darlington transistor with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.