RN1316 Series
Manufacturer: Toshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/10 KΩ, SOT-323(USM)
| Part | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Grade | Frequency - Transition | Mounting Type | Qualification | Package / Case | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) [Max] | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Resistor - Base (R1) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 mW | 500 nA | Automotive | 250 MHz | Surface Mount | AEC-Q101 | SC-70 SOT-323 | SC-70 | NPN - Pre-Biased | 100 mA | 10 kOhms | 50 | 300 mV | 50 V | 4.7 kOhms |
Toshiba Semiconductor and Storage | 100 mW | 500 nA | 250 MHz | Surface Mount | SC-70 SOT-323 | SC-70 | NPN - Pre-Biased | 100 mA | 10 kOhms | 50 | 300 mV | 50 V | 4.7 kOhms |