CSD17585F5 Series

30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Technology	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]
Texas Instruments CSD17585F5T	500 mW	4.5 V 10 V	N-Channel	27 mOhm	30 V	380 pF	Surface Mount	1.7 V	MOSFET (Metal Oxide)	3-SMD No Lead	3-PICOSTAR	5.9 A	-55 °C	150 °C	5.1 nC	20 V
Texas Instruments CSD17585F5	500 mW	4.5 V 10 V	N-Channel	27 mOhm	30 V	380 pF	Surface Mount	1.7 V	MOSFET (Metal Oxide)	3-SMD No Lead	3-PICOSTAR	5.9 A	-55 °C	150 °C	5.1 nC	20 V

Catalog

30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection

Key Features

• Low-on resistanceUltra-low Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow-on resistanceUltra-low Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . .