Catalog
1200V, 10A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 10A, THD, Silicon-carbide (SiC) SBD
1200V, 10A, THD, Silicon-carbide (SiC) SBD
| Part | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Supplier Device Package | Technology | Package / Case | Capacitance @ Vr, F | Mounting Type | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 10 A | 0 ns | 1.6 V | 175 °C | TO-220ACFP | SiC (Silicon Carbide) Schottky | TO-220-2 | 550 pF | Through Hole | No Recovery Time | 1.2 kV | 200 µA |