FQD4N20 Series

N-Channel QFET® MOSFET 200V, 3A, 1.4Ω

Catalog

N-Channel QFET® MOSFET 200V, 3A, 1.4Ω

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
ON Semiconductor FQD4N20TM	-55 °C	150 °C	N-Channel	1.4 Ohm	TO-252 (DPAK)	MOSFET (Metal Oxide)	3 A	30 V	2.5 W 30 W	200 V	Surface Mount	6.5 nC	5 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor FQD4N20TM	-55 °C	150 °C	N-Channel	1.4 Ohm	TO-252AA	MOSFET (Metal Oxide)	3 A	30 V	2.5 W 30 W	200 V	Surface Mount	6.5 nC	5 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

N-Channel QFET® MOSFET 200V, 3A, 1.4Ω

Key Features

• 3.0A, 200V, RDS(on)= 1.4Ω(Max.) @VGS= 10 V, ID= 1.5A

• Low gate charge ( Typ. 5.0nC)

• Low Crss( Typ. 5.0pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.