SI4172 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 15A 8SO
| Part | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | -55 °C | 150 °C | 23 nC | Surface Mount | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | 15 A | 8-SOIC | 12 mOhm | 20 V | 2.5 W 4.5 W | 2.5 V | 820 pF | 30 V | MOSFET (Metal Oxide) |