SI8810 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 20V 2.1A MICROFOOT
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.1 A | 20 V | 8 V | 900 mV | 8 nC | Surface Mount | 4-Microfoot | 245 pF | 500 mW | 72 mOhm | -55 °C | 150 °C | 4-XFBGA | 1.5 V 4.5 V | N-Channel | MOSFET (Metal Oxide) |