Catalog
650V 20A TO-263, Low-noise Power MOSFET
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Package / Case | FET Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | LPTS | 10 V | 4 V | 61 nC | 20 V | Surface Mount | 1400 pF | 20 A | 650 V | 231 W | MOSFET (Metal Oxide) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 150 °C |
Description
AI
R6520ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.