TIP142 Series

10 A, 100 V NPN Darlington Bipolar Power Transistor

Catalog

10 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Power - Max [Max]	Operating Temperature
ON Semiconductor TIP142	Through Hole	TO-247-3	100 V	1000	TO-247-3	150 °C	-65 °C	3 V	2 mA
ON Semiconductor TIP142TU	Through Hole	TO-220-3	100 V	1000	TO-220-3			3 V	2 mA	80 W	150 °C

Catalog

10 A, 100 V NPN Darlington Bipolar Power Transistor

Key Features

• High DC Current GainMin hFE= 1000 @ IC= 5 A, VCE= 4 V

• Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus)= 60 Vdc (Min) TIP140, TIP145VCEO(sus)= 80 Vdc (Min) TIP141, TIP146VCEO(sus)= 100 Vdc (Min) TIP142, TIP147

• Monolithic Construction with Built-In Base-Emitter Shunt Resistor

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications. The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices.