IRFU4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 2.4A TO251AA
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 20 V | 10 V | 2.5 W 42 W | 3 Ohm | 2.4 A | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | Through Hole | TO-251AA | 500 V | MOSFET (Metal Oxide) | 360 pF | 19 nC | 4 V | -55 °C | 150 °C |