FDH055N15A Series

N-Channel PowerTrench® MOSFET 150V, 167A, 5.9mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 167A, 5.9mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Technology
ON Semiconductor FDH055N15A	158 A	-55 °C	175 ░C	Through Hole	20 V	10 V	N-Channel	TO-247-3	429 W	92 nC	5.9 mOhm	150 V	9445 pF	TO-247-3	4 V	MOSFET (Metal Oxide)

Catalog

N-Channel PowerTrench® MOSFET 150V, 167A, 5.9mΩ

Key Features

• RDS(on)= 4.8mΩ ( Typ.)@ VGS= 10V, ID= 120A

• Fast Switching Speed

• Low Gate Charge, QG= 92nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.