TXB0106-Q1 Series

6-Bit Bidirectional Voltage-Level Translator with Auto Direction Sensing and +/-15-kV ESD Protect

Catalog

6-Bit Bidirectional Voltage-Level Translator with Auto Direction Sensing and +/-15-kV ESD Protect

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Data Rate	Features	Voltage - VCCB [Min]	Voltage - VCCB [Max]	Package / Case [x]	Package / Case	Package / Case [y]	Voltage - VCCA [Min]	Voltage - VCCA [Max]	Supplier Device Package	Number of Circuits	Channel Type	Translator Type	Output Type	Qualification	Grade
Texas Instruments TXB0106PWR	85 °C	-40 °C	Surface Mount	100 Mbps	Auto-Direction Sensing	1.65 V	5.5 V	0.173 in	16-TSSOP	4.4 mm	1.2 V	3.6 V	16-TSSOP	1	Bidirectional	Voltage Level	Non-Inverted Tri-State
Texas Instruments TXB0106RGYR	85 °C	-40 °C	Surface Mount	100 Mbps	Auto-Direction Sensing	1.65 V	5.5 V		16-VFQFN Exposed Pad		1.2 V	3.6 V	16-VQFN (4x3.5)	1	Bidirectional	Voltage Level	Non-Inverted Tri-State
Texas Instruments TXB0106IPWRQ1	85 °C	-40 °C	Surface Mount	100 Mbps	Auto-Direction Sensing	1.65 V	5.5 V	0.173 in	16-TSSOP	4.4 mm	1.2 V	3.6 V	16-TSSOP	1	Bidirectional	Voltage Level	Non-Inverted Tri-State	AEC-Q100	Automotive

Catalog

6-Bit Bidirectional Voltage-Level Translator with Auto Direction Sensing and +/-15-kV ESD Protect

Key Features

• 1.2 V to 3.6 V on A Port and 1.65 to 5.5 V onB Port (VCCA≤ VCCB)VCCIsolation Feature – If Either VCCInput Is atGND, All Outputs Are in the High-ImpedanceStateOE Input Circuit Referenced to VCCALow-Power Consumption, 4 µA Max ICCIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA PerJESD 78, Class IIESD Protection Exceeds JESD 22A Port2500 V Human Body Model (A114-B)150 V Machine Model (A115-A)1500 V Charged-Device Model (C101)B Port±15 kV Human Body Model (A114-B)150 V Machine Model (A115-A)1500 V Charged-Device Model (C101)1.2 V to 3.6 V on A Port and 1.65 to 5.5 V onB Port (VCCA≤ VCCB)VCCIsolation Feature – If Either VCCInput Is atGND, All Outputs Are in the High-ImpedanceStateOE Input Circuit Referenced to VCCALow-Power Consumption, 4 µA Max ICCIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA PerJESD 78, Class IIESD Protection Exceeds JESD 22A Port2500 V Human Body Model (A114-B)150 V Machine Model (A115-A)1500 V Charged-Device Model (C101)B Port±15 kV Human Body Model (A114-B)150 V Machine Model (A115-A)1500 V Charged-Device Model (C101)

Description

This 6-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCAaccepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCBaccepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCAshould not exceed VCCB. When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The TXB0106-Q1 device is designed so that the OE input circuit is supplied by VCCA. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. This 6-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCAaccepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCBaccepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCAshould not exceed VCCB. When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The TXB0106-Q1 device is designed so that the OE input circuit is supplied by VCCA. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.