FCMT199N60 Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
ON Semiconductor FCMT199N60	20.2 A	208 W	10 V	4-PowerTSFN	Power88	74 nC	600 V	N-Channel	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	2950 pF	199 mOhm	3.5 V	20 V

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88

Key Features

• 650 V @ TJ= 150°C

• RDS(on)= 170 mΩ (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 57 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 160 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solarinverter applications.The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2).SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductanceand separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).