FDB86563_F085 Series

N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

Catalog

N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

Part	Supplier Device Package	Technology	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
ON Semiconductor FDB86563-F085	TO-263 (D2PAK)	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	163 nC	4 V	-55 °C	175 ░C	AEC-Q101	N-Channel	10 V	10100 pF	20 V	333 W	60 V	Automotive	110 A	1.8 mOhm

N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

• Typical RDS(on)= 1.6 mΩ at VGS= 10V, ID= 80 A

• Typical Qg(tot)= 126 nC at VGS= 10V, ID= 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET, 60V, 110A, 1.8mΩ