TJ90S04M3L Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -90 A, 0.0043 Ω@10V, DPAK+

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature	FET Type	Power Dissipation (Max)	Technology
Toshiba Semiconductor and Storage TJ90S04M3L,LQ	172 nC	AEC-Q101	Automotive	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	90 A	7700 pF	2 V	10 V	-20 V	Surface Mount	4.3 mOhm	DPAK+	175 °C	P-Channel	180 W	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage TJ90S04M3L,LXHQ	172 nC	AEC-Q101	Automotive	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	90 A	7700 pF	2 V	10 V	-20 V	Surface Mount	4.3 mOhm	DPAK+	175 °C	P-Channel	180 W	MOSFET (Metal Oxide)