SI6963 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2P-CH 20V 3.4A 8TSSOP
| Part | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | FET Feature | Configuration | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [custom] | Package / Case [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 45 mOhm | 20 V | Surface Mount | Logic Level Gate | 2 P-Channel | 830 mW | -55 °C | 150 °C | 11 nC | 1.4 V | 8-TSSOP | 3.4 A | 8-TSSOP | 0.173 " | 4.4 mm |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 45 mOhm | 20 V | Surface Mount | Logic Level Gate | 2 P-Channel | 830 mW | -55 °C | 150 °C | 11 nC | 1.4 V | 8-TSSOP | 3.4 A | 8-TSSOP | 0.173 " | 4.4 mm |