Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
| Part | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] | Package / Case | Transistor Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Resistor - Base (R1) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 300 mV | 250 MHz | 50 V | 100 mA | 120 | 100 mW | SOT-553 | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100 nA | ESV | 4.7 kOhms | Surface Mount |